3sk41 Datasheet !free! Jun 2026
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I was unable to locate a specific datasheet for a component labeled in my available technical databases or general search results.
The provides critical technical specifications for an legacy N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . Originally manufactured by Japanese and global semiconductor pioneers including NEC, Hitachi, and Motorola , the 3SK41 was built in a TO-72 (CAN-4) metal package . It was engineering-optimized for high-frequency RF amplification, fast switching, and low noise figures in consumer and industrial communication tuners. 3sk41 datasheet
If your circuit was designed for a 3SK41B, replacing it with an A version may result in insufficient gain and poor AGC action. Conversely, replacing an A with a B may cause excessive current draw and thermal drift.
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Minimizes loading on preceding stages. 2. Technical Specifications (Absolute Maximum Ratings)
Allows for improved AGC (Automatic Gain Control) characteristics and lower cross-modulation. Low Noise: Optimized for high-frequency sensitivity. However, I can guide you on how to
It was most famously used in the RF front-end sections of high-end audio equipment and radio transceivers from that era.
The 3SK41 was engineered to provide high gain and low noise figures in high-frequency circuits. Below are the typical electrical characteristics found in the original datasheet. Maximum 20V Drain Current (Id): Maximum 25mA Gate-Source Voltage (Vgs1/Vgs2): ±10V Power Dissipation (Pd): 200mW Forward Transfer Admittance (|yfs|): 10 to 18 mS Input Capacitance (Ciss): ~5.0 pF Noise Figure (NF): ~2.0 dB at 200 MHz 🛠️ Key Features and Advantages
Since an original datasheet is hard to find, use this quick in-circuit or out-of-circuit test procedure.
The Kenwood TS-520S, a hugely popular HF transceiver, utilized the 3SK41 in multiple critical RF stages: